AT-41535 up to 6 ghz low noise silicon bipolar transistor data sheet description/applications the AT-41535 of avago techologies is a general pur - pose npn bipolar transistor that ofers excellent high frequency performance. the AT-41535 is house in a cost efective surface mount 100 mil micro-x package. the 4 micron emitter-to-emitter pitch enables this transistor to be used in many diferent functions. the 15 emitter fngers interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. this device is designed for use in low noise, wideband ampli - fer, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 ??at 1ghz, makes this device easy to use as a low noise amplifer. the AT-41535 bipolar transistor is fabricated using avago technologies 10 ghz ft self-aligned-transistor (sat) pro - cess. the die is nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion implantation, self-align - ment techniques, and gold metallization in the fabrica - tion of this device. features ? low noise figure : - 1.7 db typical at 2.0 ghz - 3.0 db typical at 4.0 ghz ? high associated gain - 14.0 db typical at 2.0ghz - 10.0 db typical at 4.0 ghz ? high gain-bandwidth product - 8.0 ghz typical ft ? cost efective ceramic micro-strip package 35 micro-x package
2 table 1. absolute maximum ratings [1] at tc = +25 c notes: 1. operation in excess of any one of these conditions may result in permanent damage to the device. 2. tcase = 25 c 3. derate at 8 mw/ c for tc>87.5 c. 4. storage above +150 c may tarnish the leads of this package making it difcult to solder into a circuit. 5. thermal resistance is measured using ir microscopy method. table 2. electrical specifcations at tc = +25 c, v ce =8v notes: 1. for this test, the emitter is grounded. symbol parameter unit max rating v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 60 p t power dissipation [2] mw 500 tj junction temperature c 150 tstg storage temperature c -60 to 150 q jc thermal resistance [5] c/w 125 symbol parameter and test condition units min. typ. max. |s 21e | 2 insertion power gain; v ce =8v, ic=25ma f = 2.0 ghz f = 4.0 ghz db 11.0 5.5 p1db power output @1db gain compression: v ce =8v, ic=25 ma f = 2.0 ghz f = 4.0 ghz dbm 19.0 18.5 g1db 1 db compressed gain: v ce =8v, ic=25 ma f = 2.0 ghz f = 4.0 ghz db 14.0 9.0 nfo optimum noise figure: v ce =8v, ic = 10 ma f = 1.0 ghz f = 2.0 ghz f = 4.0 ghz db 1.30 1.70 3.00 2.0 g a gain @ nfo ; v ce =8v, ic=10ma f = 1.0 ghz f = 2.0 ghz f = 4.0 ghz db 13.0 18.0 14.0 10.0 f t gain bandwidth product: ic = 25 ma ghz 8.0 h fe forward current transfer ratio: v ce =8v, ic = 10 ma - 30 180 270 i cbo collector cutof current: v cb = 8 v ua 0.2 i ebo emitter cutof current: v eb = 1 v ua 1.0 c cbo collector base capacitance [1] : v cb =8v,f=1mhz pf 0.20
typical performance curves at tc = +25 c figure 1. noise figure and associated gain vs. frequency. vce = 8v, ic = 10ma figure 2. output power and 1db compression gain vs. collector current and fre - quency. vce = 8v. figure 3. optimum noise figure and associated gain vs. collector current and col - lector voltage. f = 2.0ghz. figure 4. optimum noise figure and associated gain vs. collector current and fre - quency. vce = 8v. figure 5. insertion power gain, maximum available gain and maximum stable gain vs. frequency. vce = 8v, ic = 25ma figure 6. insertion power gain vs. collector current and frequency. vce = 8v. 0 3 6 9 12 15 18 21 24 0 1 2 3 4 5 frequency (ghz ) gain (db) 0 2 4 6 8 10 12 14 16 nf (db) ga nf 5 0 ? nf o 4 8 12 16 20 24 0 1 0 2 0 3 0 4 0 5 0 ic (ma) gain (db) p1db (dbm) p1db 2.0ghz g1db 2.0ghz 4.0ghz 4.0ghz 7 8 9 10 11 12 13 14 15 16 0 1 0 2 0 3 0 4 0 5 0 ic (ma) gain (db) 0 1 2 3 4 5 6 7 8 9 nfo (db) ga nfo 10v 6v 4v 10v 6v 4v 0 2 4 6 8 10 12 14 16 0 1 0 2 0 3 0 4 0 5 0 gain (db) 0 2 4 6 8 10 12 14 16 nfo (db) ga nfo 2.0ghz 4.0ghz 4.0ghz 2.0ghz ic (ma) 0 5 10 15 20 25 30 35 40 0.1 1 1 0 frequency (ghz) gain (db) |s 21e | 2 msg mag 2 4 6 8 10 12 14 16 18 20 0 1 0 2 0 3 0 4 0 5 0 ic (ma) gain (db) 1.0 ghz 2.0 ghz 4.0 ghz
4 freq. s11 s21 s12 s22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 0.780 -32.6 28.01 25.151 156.9 -40.00 0.010 81.4 0.943 -11.3 0.5 0.495 -112.1 21.90 12.446 108.0 -30.46 0.030 52.0 0.635 -25.3 1 0.402 -154.7 16.64 6.795 85.0 -26.94 0.045 56.0 0.544 -27.3 1.5 0.388 172.7 13.35 4.651 71.0 -24.58 0.059 59.6 0.517 -29.2 2 0.400 162.3 10.97 3.536 60.2 -22.62 0.074 59.0 0.497 -34.1 2.5 0.426 152.3 9.21 2.889 53.5 -21.11 0.088 62.6 0.478 -36.7 3 0.461 141.7 7.75 2.440 43.8 -19.33 0.108 63.0 0.467 -44.4 3.5 0.482 134.5 6.50 2.113 34.2 -18.13 0.124 60.6 0.467 -53.4 4 0.493 125.8 5.47 1.877 25.6 -16.77 0.145 57.1 0.481 -61.9 4.5 0.494 114.1 4.67 1.711 14.8 -15.34 0.171 53.2 0.504 -68.9 5 0.491 104.2 3.80 1.548 5.7 -14.38 0.191 50.9 0.517 -74.3 5.5 0.515 91.9 3.11 1.431 -3.5 -13.35 0.215 44.8 0.503 -79.6 6 0.581 82.6 2.56 1.342 -13.0 -12.40 0.240 40.9 0.457 -90.2 freq. s11 s21 s12 s22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 0.586 -53.5 32.22 40.842 145.1 -40.92 0.009 82.1 0.850 -17.4 0.5 0.382 -140.8 23.11 14.306 98.4 -32.04 0.025 61.9 0.528 -22.8 1 0.358 -174.2 17.40 7.416 79.6 -27.74 0.041 68.9 0.487 -23.2 1.5 0.362 167.6 13.98 5.003 67.7 -23.88 0.064 67.4 0.467 -27.4 2 0.385 152.4 11.57 3.789 57.9 -22.05 0.079 64.8 0.448 -31.4 2.5 0.408 145.5 9.79 3.086 52.3 -20.00 0.100 64.8 0.428 -34.7 3 0.442 137.0 8.32 2.605 43.6 -18.71 0.116 65.9 0.418 -43.2 3.5 0.463 130.0 7.09 2.262 34.0 -17.27 0.137 61.2 0.426 -52.3 4 0.484 121.4 6.03 2.003 25.4 -16.08 0.157 58.4 0.431 -60.8 4.5 0.476 110.5 5.24 1.828 15.5 -14.99 0.178 52.2 0.461 -68.6 5 0.462 101.3 4.33 1.647 6.4 -14.11 0.197 48.1 0.466 -72.8 5.5 0.495 90.1 3.73 1.537 -1.8 -13.00 0.224 42.8 0.454 -79.2 6 0.563 80.5 3.10 1.429 -11.6 -12.04 0.250 36.9 0.396 -89.2 typical scattering parameters at tc = +25 c common emitter, v ce =8v, ic = 10ma, zo=50 ohm typical scattering parameters at tc = +25 c common emitter, v ce =8v, ic = 25ma, zo=50 ohm
for product information and a complete list of distributors, please go to our web site: www.avagotech.com avago, avago technologies, and the a logo are trademarks of avago technologies limited in the united states and other countries. data subject to change. copyright ? 2005-2008 avago technologies limited. all rights reserved. obsoletes av01-0144en av02-1216en - april 29, 2008 typical noise parameters at tc = +25 c v ce =8v, ic = 10ma, zo=50 ohm part number ordering information freq.ghz nfodb g opt rn/50 mag ang 0.1 1.30 0.184 -4.1 0.22 0.5 1.33 0.206 9.5 0.21 1 1.42 0.107 15.8 0.20 2 1.73 0.328 -165.5 0.18 4 2.92 0.557 -128.3 0.27 part number no of devices AT-41535g 100 35 micro-x package dimensions 1 3 4 2 emitter dia. emitter collector base .085 2.15 415 .083 2.11 .020 .508 .100 2.54 .455 .030 11.54 .7 5 .006 .002 .15 .0 5 notes : (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .022 .5 6 .057 .010 1.45 .2 5
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